f dn 358p general description features absolute maximum ratings t a = 25 o c unless other wise noted symbol parameter f dn 358p units v dss drain-source voltage -30 v v gss gate-source voltage 20 v i d drain/output current - continuous -1.5 a - pulsed -5 p d maximum power dissipation (note 1a ) 0.5 w (note 1 b) 0.46 t j ,t stg operating and storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 250 c/w r q jc thermal resistance, junction-to-case (note 1) 75 c/w -1.5 a, -3 0 v, ?r ds(on ) = 0.125 w @ v gs = -10 v r ds(on ) = 0.20 w @ v gs = - 4.5 v. high power version of industry sot-23 package: i dentical pin out to sot-23 ; 30% higher power handling capability. high density cell design for extremely low r ds(on) . exceptional on-resistance and maximum dc current capability. supersot tm -3 p -c hannel logic level enhancement mode power field effect transistors are produced using fairchild 's proprietary, high cell density, dmos technology. this very high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage applications in notebook computers, portable phones, pcmcia cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. g d s supersot -3 tm 358 supersot t m -8 soic-16 so-8 sot-223 supersot t m -3 supersot t m -6 d s g 1 of 2 4008-318-123 http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics (t a = 25 o c unless otherwise noted ) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -30 v d bv dss / d t j breakdown voltage temp. coefficient i d = -250 a , referenced to 25 o c -28 mv/ o c i dss zero gate voltage drain current v ds = -24 v, v gs = 0 v -1 a t j = 5 5c -10 a i gssf gate - body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate - body leakage, reverse v gs = - 20 v , v ds = 0 v -100 na on characteristics (note 2 ) v gs (th) gate threshold voltage v ds = v gs , i d = -250 a -1 -1.5 -2 v d v gs(th) / d t j gate threshold voltage temp. coefficient i d = - 250 a , referenced to 25 o c 3 mv/ o c r ds(on) static drain-source on-resistance v gs = -10 v, i d = -1.5 a 0.11 0.125 w t j =12 5c 0.15 0.21 v gs = -4.5 v, i d = -1 .2 a 0.175 0.2 i d(on) on-state drain current v gs = -4.5 v, v ds = -5 v -5 a g fs forward transconductance v ds = -10 v, i d = -1.5 a 7 s dynamic characteristics c iss input capacitance v ds = -10 v, v gs = 0 v, f = 1.0 mhz 270 pf c oss output capacitance 150 pf c rss reverse transfer capacitance 45 pf switching ch aracteristics (note 2) t d(on ) turn - on delay time v dd = -15 v, i d = -1 a, v gs = -10 v, r gen = 6 w 8 16 ns t r turn - on rise time 7 14 ns t d(off) turn - off delay time 17 27 ns t f turn - off fall time 10 1.8 ns q g total gate charge v ds = -5 v, i d = -1.5 a, v gs = -10 v 6.5 9.1 nc q gs gate-source charge 1 nc q gd gate-drain charge 1.1 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -0.42 a v sd drain-source diode forward voltage v gs = 0 v, i s = -0.42 a (note 2 ) -0.74 -1.2 v note: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. typical r q ja using the board layouts shown below on fr-4 pcb in a still air environment : scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. a. 250 o c/w when mounted on a 0.0 2 in 2 pad of 2oz cu. b. 270 o c/w when mounted on a 0.001 in 2 pad of 2oz cu. 2 of 2 4008-318-123 http://www.twtysemi.com f dn 358p smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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